Advanced Measurement Technologies As a silicon wafer is automatically loaded onto an AMS tool, the instrument immediately identifies the target wafer location. Each spot is scanned, and AMS's patented metrology technologies capture a set of highly specific data keyed specifically to the structures existing at each spot. The data is processed and is quickly converted to readable, relevant information which guides the process engineers in their quest for higher quality and better yields. AMS research engineers have adapted a number of measurement technologies specifically for semiconductor metrology. Our proprietary acoustic laser and model-based infrared laser technologies assure accuracy, reliability and repeatability. And AMS continues to evaluate emergent technologies for their applicability to metrology applications. Every AMS technology is chosen for its ability to integrate with the high-throughput non-contact, non-destructive wafer-handling platform, to provide instantaneous results, and to provide data which allows process engineers make their SPC ranges ever narrower and affect their APC loop. The performance of AMS acoustic and model-based infrared technologies has been recognized in peer-reviewed journals, and, more importantly, confirmed, tested and proven in tough production environments. Model-based infrared technology Using model-based infrared technology, AMS provides precise measurements of the thickness and uniformity of dielectric layers and etched structures used in IC manufacture. The MBIR technology is particularly useful for metrology challenges in DRAM, power device and stacked interconnect fabrication, where high-aspect-ratio trench structures have become a staple of the manufacturing process. The AMS model-based infrared reflectometry metrology family include the IR3000, IR3100, IR3100N, and IR3100S. Click the above graphic for a video explanation of the MBIR measurement process (Microsoft Media Player required:  click here if the video does not open in its own Media Player window). For an even more in-depth explanation of the technical basis behind the MBIR process, click here. Surface wave acoustic technology The SurfaceWave™ process uses two lasers to create an acoustic wave which travels across the surface of a metal or dielectric film. This process provides precise measurements of the thickness and uniformity of blanket and patterned metal films, including barrier/seed layer thicknesses, providing timely information for the control of copper-based processes. It is effective on a variety of metallic materials involved in the semiconductor manufacturing process, including aluminum, cobalt, copper, tantalum, tantalum nitride, tungsten titanium, and titanium nitride. The process has become a proven metrology technique for pre- and post-CMP applications, measuring Damascene structures, plus CVD, PVD, and ECD process control. The AMS SurfaceWave metrology tool is the AMS 3300. Click the above graphic for a video explanation of the SurfaceWave measurement technology (Microsoft Media Player required:  click here if the video does not open in its own Media Player window). For an even more in-depth explanation of the technical basis behind the SurfaceWave process, click here.